Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2746057
Reference14 articles.
1. Properties of Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])/GaN metal–insulator–semiconductor diodes
2. Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
3. Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3–GaN interfaces by X-ray photoelectron spectroscopy
4. MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors
5. Inversion behavior in Sc2O3/GaN gated diodes
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