Hafnium Chloride Pulse Time Reduction on Atomic Layer Deposited High-K HfO2 Dielectric Films-Reference-Cited by-同舟云学术

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Hafnium Chloride Pulse Time Reduction on Atomic Layer Deposited High-K HfO2 Dielectric Films

Published:2024-05-13 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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Author:

Rajachidambaram Meena¹,Rodman Bridgette¹,Bennett Alyssa¹,Clements Justin¹,Korevaar Bas¹

Affiliation:

1. GLOBALFOUNDRIES Inc.,Malta,NY,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10545359/10545360/10545469.pdf?arnumber=10545469

Reference13 articles.

1. Studies and Optimization of HfO2 Grown by HfCl4/H2O Atomic Layer Deposition

2. Atomic layer deposition of hafnium oxide: A detailed reaction mechanism from first principles

3. Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide

4. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3

5. Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

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