Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Author:

Gong Jiarui12ORCID,Su Xin2ORCID,Qiu Shuoyang2ORCID,Zhou Jie2ORCID,Liu Yang2ORCID,Li Yiran2ORCID,Kim Donghyeok2ORCID,Tsai Tsung-Han2ORCID,Ng Tien Khee3ORCID,Ooi Boon S.3ORCID,Ma Zhenqiang2ORCID

Affiliation:

1. Department of Physics, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706, USA

2. Department of Electrical and Computer Engineering, University of Wisconsin-Madison 2 , Madison, Wisconsin 53706, USA

3. Department of Electrical and Computer Engineering, King Abdullah University of Science and Technology 3 , Thuwal 23955-6900, Saudi Arabia

Abstract

The recently demonstrated semiconductor grafting approach allows one to create an abrupt, low interface-trap-density heterojunction between a high-quality p-type single-crystalline semiconductor (non-nitrides) with n-type GaN. However, due to the surface band-bending from GaN polarization, an energy barrier exists at the grafted heterojunction, which can impact the vertical charge carrier transport. Reducing the energy barrier height is essential for some advanced device development. In this work, we employed UV/O3 and O2 plasma to treat a Ga-polar GaN surface with/without an ultrathin (∼2 nm) ALD-Al2O3 coating and studied the effects of the treatments on surface band-bending. Through XPS measurements, it was found that the treatments can suppress the upward band-bending of the Ga-polar GaN by 0.11–0.39 eV. The XPS results also showed that UV/O3 treatment is an effective surface cleaning method with little surface modification, while O2 plasma causes a strong oxidation process that occurs inside the top layer GaN.

Funder

Air Force Office of Scientific Research

King Abdullah University of Science and Technology

Publisher

AIP Publishing

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