GaN, AlN, and InN: A review-Reference-Cited by-同舟云学术

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GaN, AlN, and InN: A review

Published:1992-07 Issue:4 Volume:10 Page:1237
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Strite S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 2913 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double barrier structure of Mo/AlN/Mo/AlN/Mo multilayer and its resonant tunneling effect;Vacuum;2024-10

2. Fabrication of three-dimensional microstructures on GaN surfaces through the integration of femtosecond laser ablation and ICP etching;Optics Communications;2024-10

3. Influence of the sintering methods on the electrical properties of cerium-doped aluminium nitride ceramics;Progress in Solid State Chemistry;2024-09

4. Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering;Vacuum;2024-09

5. A review of ultra-short pulse laser micromachining of wide bandgap semiconductor materials: SiC and GaN;Materials Science in Semiconductor Processing;2024-09

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