MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors-Reference-Cited by-同舟云学术

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MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Published:2004-04-12 Issue:15 Volume:84 Page:2919-2921
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Irokawa Y.,Nakano Y.,Ishiko M.,Kachi T.,Kim J.,Ren F.,Gila B. P.,Onstine A. H.,Abernathy C. R.,Pearton S. J.,Pan C.-C.,Chen G.-T.,Chyi J.-I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1704876

Reference34 articles.

1. High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

2. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress

3. Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

4. SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs

5. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

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