Impact of Post-Deposition Annealing on the Electronic Properties of Al2o3/Gan Interface by First-Principles Study-Reference-Cited by-同舟云学术

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Impact of Post-Deposition Annealing on the Electronic Properties of Al2o3/Gan Interface by First-Principles Study

Published:2023 Issue: Volume: Page:
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Author:

Yang Jiaofen,Tao Ming,Xiao Jing,Chen Jiashu,Huang Bowen,Liu Jie,He Min,Wang Hongyue,Wang Maojun

Publisher

Elsevier BV

Reference57 articles.

1. Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H?/N? Plasma Pretreatment;B Zhang;IEEE Electron Device Lett,2022

2. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al 2 O 3 dielectric;T Hashizume;Appl. Phys. Lett,2003

3. Nishii, 1.8 m?�cm 2 vertical GaN-based trench metal-oxidesemiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation;T Oka;Appl. Phys. Express,2015

4. Structural and electrical characteristics of atomic layer deposited high ? HfO 2 on GaN;Y C Chang;Appl. Phys. Lett,2007

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