Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3–GaN interfaces by X-ray photoelectron spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
2. Leakage mechanism in GaN and AlGaN Schottky interfaces
3. Power and Linearity Characteristics of GaN MISFETs on Sapphire Substrate
4. Properties of Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])/GaN metal–insulator–semiconductor diodes
5. C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
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