Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System-Reference-Cited by-同舟云学术

Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

Published:2018-06-04 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Huang Rong,Li Fangsen,Liu Tong,Zhao Yanfei,Zhu Yafeng,Shen Yang,Lu Xiaoming,Huang Zengli,Liu Jianping,Zhang Liqun,Zhang Shuming,Li Zhanping,Dingsun An,Yang Hui

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-26734-5.pdf

Reference30 articles.

1. Hofmann, S. Sputter depth profiling: past, present, and future. Surface and Interface Analysis 46, 654–662 (2014).

2. Lisowski, W. et al. XPS method as a useful tool for studies of quantum well epitaxial materials: Chemical composition and thermal stability of InGaN/GaN multilayers. Journal of Alloys and Compounds 597, 181–187 (2014).

3. Kim, S. K., Han, J. C. & Seong, T.-Y. Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer. Japanese Journal of Applied Physics 55, 031001 (2016).

4. Park, J. S., Han, J. & Seong, T. Y. Formation of low resistance Ti/Al-based ohmic contacts on (11–22) semipolar n-type GaN. Journal of Alloys and Compounds 652, 167–171 (2015).

5. Lay, T. S. et al. Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3–GaN interfaces by X-ray photoelectron spectroscopy. Journal of Crystal Growth 278, 624–628 (2005).

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride;Advanced Materials;2023-02-09

2. Formation Mechanism and Bandgap Reduction of GaN–ZnO Solid‐Solution Thin Films Fabricated by Nanolamination of Atomic Layer Deposition;Advanced Materials;2023-01

3. Large-Sized Nanocrystalline Ultrathin β-Ga2O3 Membranes Fabricated by Surface Charge Lithography;Nanomaterials;2022-02-18

4. Ni₃(PO₄)₂ Cocatalyst-Supported β–Ga₂O₃/GaN Photoanodes for Highly Stable Solar Water Splitting;ACS Applied Energy Materials;2022-01-18

5. The Pb(Zr 0.2 ,Ti 0.8 )O 3 /ZnO/GaN Ferroelectric–Semiconductor Heterostructure: Insight into the Interfacial Energy Level Alignments;Advanced Materials Interfaces;2020-05-05