The Pb(Zr 0.2 ,Ti 0.8 )O 3 /ZnO/GaN Ferroelectric–Semiconductor Heterostructure: Insight into the Interfacial Energy Level Alignments-Reference-Cited by-同舟云学术

The Pb(Zr 0.2 ,Ti 0.8 )O 3 /ZnO/GaN Ferroelectric–Semiconductor Heterostructure: Insight into the Interfacial Energy Level Alignments

Author:

Wang Juan¹²,Wilks Regan G.¹³,Félix Roberto¹,Liao Xia X.¹⁴,Grigoriev Alexei²,Bär Marcus¹³⁵⁶^ORCID

Affiliation:

1. Interface DesignHelmholtz‐Zentrum Berlin für Materialien und Energie GmbH (HZB) Berlin 12489 Germany

2. Department of Physics and Engineering PhysicsThe University of Tulsa Tulsa OK 74104 USA

3. Energy Materials In‐Situ Laboratory Berlin (EMIL)Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Berlin 12489 Germany

4. School of Material Science and EngineeringNanchang University Nanchang 330031 P. R. China

5. Helmholtz‐Institute Erlangen‐Nürnberg for Renewable Energy (HI ERN) Berlin 12489 Germany

6. Department of Chemistry and PharmacyFriedrich‐Alexander‐Universität Erlangen‐Nürnberg Erlangen 91054 Germany

Funder

DAAD RISE Professional program

Impuls-und Vernetzungsfond of the Helmholtz-Association

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

Reference40 articles.

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