Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-Blind Ultraviolet Detection
Author:
Affiliation:
1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, China
2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10415514/10368102.pdf?arnumber=10368102
Reference29 articles.
1. Low-dimensional wide-bandgap semiconductors for UV photodetectors
2. All-silicon photovoltaic detectors with deep ultraviolet selectivity
3. Low-Temperature Solution-Processed Lu2O3 Films for Deep-UV Photovoltaic Detectors With High Sensitivity
4. Vacuum-ultraviolet photodetectors
5. Three-dimensional metal–semiconductor–metal AlN deep-ultraviolet detector
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1. Advanced Organic-Inorganic Hybrid Solar-Blind UV Photodetector With β-Ga₂O₃ Film From Thermal Oxidation;IEEE Transactions on Electron Devices;2024-09
2. High Selectivity and Wide Range UV Photodetection in PEDOT:PSS/ Lu₀.₂₇Sn₀.₇₃O/ZnO Heterojunction;IEEE Transactions on Electron Devices;2024-04
3. A high-performance Ti3C2Tx/Lu2O3/GaN heterojunction deep ultraviolet photovoltaic photodetector enhanced via the dual-field coupling effect;Journal of Materials Chemistry C;2024
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