Formation of low resistance Ti/Al-based ohmic contacts on (11–22) semipolar n-type GaN
Author:
Funder
LG Innotek, Co., Ltd
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
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1. Using a NiZn solid solution layer to produce high-barrier height Schottky contact to semipolar (20–21) n-type GaN;Journal of Alloys and Compounds;2021-01
2. Comparative study of n-GaN transition group refractory metal Ohmic electrode;Acta Physica Sinica;2019
3. Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System;Scientific Reports;2018-06-04
4. Structural, electronic and magnetic properties of Ti-doped polar and nonpolar GaN surfaces;Journal of Crystal Growth;2017-06
5. Temperature dependence of the Raman-active modes in the semipolar (11 2¯2) plane GaN Film;Journal of Applied Physics;2016-12-28
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