Temperature dependence of the Raman-active modes in the semipolar (11 2¯2) plane GaN Film-Reference-Cited by-同舟云学术

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Temperature dependence of the Raman-active modes in the semipolar (11 2¯2) plane GaN Film

Published:2016-12-28 Issue:24 Volume:120 Page:245706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jiang Teng¹,Xu Shengrui¹,Zhang Jincheng¹,Li Peixian²³,Huang Jun⁴,Niu Mutong⁴,Meng Xijun³,Chen Zhibin¹,Zhu Jiaduo¹,Zhao Ying¹,Zhang Yachao¹,Hao Yue¹

Affiliation:

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi'dian University, Xi'an 710071, China

2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

3. Xi'an Zoomview Optoelectronics Science and Technology CO., LTD, Xi'an 710071, China

4. Suzhou Institute of Nano-tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215132, China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4972951

Reference34 articles.

1. Current Status of GaN-Based Solid-State Lighting

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Semipolar GaN-based heterostructures on foreign substrates

4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

5. Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire

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1. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06

2. Fabrication of composition-controlled MOCVD grown InxGa1-xN based MSM photodetectors;Optical Materials;2023-02

3. A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition;Semiconductor Science and Technology;2022-05-05

4. Effect of Flux Rate Variation at Fixed V/III Ratio on Semi-Polar (112¯2) GaN: Crystal Quality and Surface Morphology Study;Crystals;2022-02-11

5. Enhanced indium adsorption and surface evolution of semi-polar (11–22) LED via a strain periodic alternating superlattice (SPAS-L);Materials Today Communications;2021-06

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