Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots-Reference-Cited by-同舟云学术

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Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots

Published:2005-08-08 Issue:6 Volume:87 Page:061906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Il-Kyu,Kwon Min-Ki,Baek Sung-Ho,Ok Young-Woo,Seong Tae-Yeon,Park Seong-Ju,Kim Yoon-Seok,Moon Yong-Tae,Kim Dong-Joon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2008365

Reference22 articles.

1. GaN, AlN, and InN: A review

2. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

3. Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

4. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

5. Origin of Luminescence from InGaN Diodes

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