C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010403?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Fabrication and characterization of GaN FETs
2. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
3. Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
4. MOS capacitance measurements for high-leakage thin dielectrics
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2. Characteristics of GaN Metal-Insulator-Semiconductor-Insulator-Metal Ultraviolet Photodiodes Using Al2O3, HfO2, and ZrO2 as Insulators;IEEE Sensors Journal;2018-06-01
3. Enhanced memory characteristics by interface modification of ferroelectric LiNbO3 films on Si using ZnO buffers;Journal of Alloys and Compounds;2014-06
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