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Fabrication and characterization of GaN FETs

  • Published:1997-10 Issue:10 Volume:41 Page:1549-1554
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Binari S.C.,Kruppa W.,Dietrich H.B.,Kelner G.,Wickenden A.E.,Freitas J.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. A theoretical model to study the performance of a GaN HEMT under electron velocity saturation;NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020;2021
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