600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications-Reference-Cited by-同舟云学术

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600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

Published:2013-10 Issue: Volume: Page:
ISSN:
Container-title:The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
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Author:

Kikkawa Toshihide,Hosoda Tsutomu,Akiyama Shinichi,Kotani Yoshiyuki,Wakabayashi Toshihiro,Ogino Tsutomu,Imanishi Kenji,Mochizuki Akitoshi,Itabashi Kazuo,Shono Ken,Asai Yoshimori,Joshin Kazukiyo,Ohki Toshihiro,Kanamura Masahito,Nishimori Masato,Imada Tadahiro,Kotani Junji,Yamada Atsushi,Nakamura Norikazu,Hirose Tatsuya,Watanabe Keiji

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6683942/6695542/06695552.pdf?arnumber=6695552

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN Technology for Power Electronic Applications: A Review;Journal of Electronic Materials;2016-03-10

2. Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors;Applied Physics Express;2015-10-19

3. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique;Nanoscale Research Letters;2015-03-04

4. Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors;Japanese Journal of Applied Physics;2014-09-05

5. Evaluation of off-bias-stress induced surface charging at AlGaN/GaN surface using a dual-gate transistor structure;Japanese Journal of Applied Physics;2014-06-05

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