Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices-Reference-Cited by-同舟云学术

Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

Published:2022-08 Issue:8 Volume:69 Page:4432-4437
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Modolo N.¹^ORCID,De Santi C.¹^ORCID,Baratella G.²,Bettini A.¹,Borga M.³^ORCID,Posthuma N.³^ORCID,Bakeroot B.²^ORCID,You S.³^ORCID,Decoutere S.³^ORCID,Bevilacqua A.¹^ORCID,Neviani A.¹^ORCID,Meneghesso G.¹^ORCID,Zanoni E.¹^ORCID,Meneghini M.¹^ORCID

Affiliation:

1. Department of Information Engineering, Università degli Studi di Padova, Padua, Italy

2. CMST, IMEC, Ghent University, Ghent, Belgium

3. IMEC VZW, Leuven, Belgium

Funder

iRel40 Project

Electronics Components andSystems for European Leadership (ECSEL) Joint Undertaking

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09810950.pdf?arnumber=9810950

Reference29 articles.

1. Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

2. Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology

3. Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

4. Lucky-electron model of channel hot-electron injection in MOSFET's;tam;IEEE Trans Electron Devices,1984

5. Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs

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2. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations;Applied Physics Letters;2023-04-17

3. On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs;IEEE Transactions on Electron Devices;2023