Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions-Reference-Cited by-同舟云学术

Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions

Published:2017-04-17 Issue:16 Volume:110 Page:162907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fei Jiayang¹,Kunugi Ryota²,Watanabe Takanobu²,Kita Koji¹

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

2. Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4980059

Reference21 articles.

1. Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

2. Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

3. Kelvin Probe Study of Dipole Formation and Annihilation at the HfO2/Si Interface

4. Effect of Composition in Ternary La–Al–O Films on Flat-Band Voltage for Application to Dual High-kGate Dielectric Technology

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