Dipole-induced modulation of effective work function of metal gate in junctionless FETs-Reference-Cited by-同舟云学术

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Dipole-induced modulation of effective work function of metal gate in junctionless FETs

Published:2020-05-01 Issue:5 Volume:10 Page:055203
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wang Xinhe¹^ORCID,Zhang Zhigang¹^ORCID,Tang Jianshi¹²^ORCID,Gao Bin¹²,Sun Wen¹,Xu Feng¹^ORCID,Wu Huaqiang¹²^ORCID,Qian He¹²

Affiliation:

1. Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, China

2. Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5143771

Reference22 articles.

1. A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

2. Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits

3. A Novel PNPN-Like Z-Shaped Tunnel Field- Effect Transistor With Improved Ambipolar Behavior and RF Performance

4. H. Chen, Y. Wu, C. Chang, M. Han, N. Lu, and Y. Cheng, in 2013 Symposium on VLSI Technology (IEEE, 2013), p. T232.

5. Junctionless multigate field-effect transistor

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices;IEEE Electron Device Letters;2023-10

2. Modeling and analysis of gate-induced drain leakage current in negative capacitance junctionless FinFET;Journal of Computational Electronics;2022-08-16

3. Probing Nanoscale Schottky Barrier Characteristics at WSe ₂ /Graphene Heterostructures via Electrostatic Doping;Advanced Electronic Materials;2022-03-31

4. Ionically Mediated Mechanical Deformation Associated with Memristive Switching;Advanced Functional Materials;2021-08-25

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