Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices
Author:
Affiliation:
1. School of Microelectronics, Fudan University, Shanghai, China
Funder
Shanghai Sailing Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10265125/10233892.pdf?arnumber=10233892
Reference32 articles.
1. Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs
2. Random dopant fluctuation modelling with the impedance field method
3. Variability analysis of the epitaxial layer TFET due to gate work function variation, random dopant fluctuation, and oxide thickness fluctuation using the statistical impedance field method
4. Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study
5. Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)
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