Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study

Author:

Asenov A.,Kaya S.,Davies J.H.,Saini S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, http://notes.sematech.org/1999_ SIA_ Roadmap.htm,1999

2. Random dopant induced threshold voltage lowering and fluctuations in sub 0.1 μ m MOSFETs: a 3D ‘atomistic’ simulation study;Asenov;IEEE Trans. Electron Devices,1998

3. 1.5 nm direct-tunnelling gate oxide Si MOSFETs;Momose;IEEE Trans. Electron Devices,1996

4. Dependence of electron channel mobility on Si–SiO2interface microroughness;Ohmi;IEEE Electron Device Lett.,1991

5. Electron and hole quantisation and their impact on deep submicron silicon p- and n-MOSFET characteristics;Jallepalli;IEEE Trans. Electron Devices,1997

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