UTBB FD-SOI Variability Characterization Using Programmable Transistor Arrays-Reference-Cited by-同舟云学术

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UTBB FD-SOI Variability Characterization Using Programmable Transistor Arrays

Published:2023-07-24 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Mahmoud M. Mounir¹,Prinzie J.¹,Belie A. Adebabay¹,De Raedemaeker S.¹,Leroux P.¹

Affiliation:

1. ADVISE Research Laboratory, KU Leuven,Department of Electrical Engineering,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249085.pdf?arnumber=10249085

Reference21 articles.

1. Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation

2. On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells

3. Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Threshold Voltage Model;rao;IEEE Transactions on Device and Materials Reliability,2010

4. Modeling Process Variability in Scaled CMOS Technology

5. Stacked MOSFETs in analog layout;waller;Pulsic,2021

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