On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells-Reference-Cited by-同舟云学术

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On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells

Published:2011-08 Issue:8 Volume:58 Page:2326-2336
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mazurier Jérôme,Weber Olivier,Andrieu François,Toffoli Alain,Rozeau Olivier,Poiroux Thierry,Allain Fabienne,Perreau Pierre,Fenouillet-Beranger Claire,Thomas Olivier,Belleville Marc,Faynot Olivier

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5959271/05934402.pdf?arnumber=5934402

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates;Advanced Functional Materials;2024-07-03

2. UTBB FD-SOI Variability Characterization Using Programmable Transistor Arrays;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24

3. FDSOI-Based Analog Computing for Ultra-Efficient Hamming Distance Similarity Calculation;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-07

4. Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell;Solid-State Electronics;2022-10

5. Interface trap charge-based reliability assessment of high-k dielectric-modulated nanoscaled FD SOI MOSFET for low power digital ICs: Modeling and simulation;Superlattices and Microstructures;2021-06

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