Modeling and analysis of gate-induced drain leakage current in negative capacitance junctionless FinFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10825-022-01930-9.pdf
Reference43 articles.
1. Moore, S.K.: Another step toward the end of moore’s law: samsung and TSMC move to 5-nanometer manufacturing—[news]. IEEE Spectr. 56(6), 9–10 (2019). https://doi.org/10.1109/mspec.2019.8727133
2. Khanna, V.K.: Integrated nanoelectronics. NanoSci. Technol. (2016). https://doi.org/10.1007/978-81-322-3625-2
3. Gupta, S., Steiner, M., Aziz, A., Narayanan, V., Datta, S., Gupta, S.K.: Device-circuit analysis of ferroelectric FETs for low-power logic. IEEE Trans. Electron Dev. 64(8), 3092–3100 (2017). https://doi.org/10.1109/ted.2017.2717929
4. Wu, C., Huang, R., Huang, Q., Wang, J., Wang, Y.: Design guideline for complementary heterostructure tunnel FETs with steep slope and improved output behavior. IEEE Electron Dev. Lett. 37(1), 20–23 (2016). https://doi.org/10.1109/led.2015.2499183
5. Solay, L.R., Singh, S., Kumar, N., Amin, S.I., Anand, S.: Design of DUAL-GATE p-type IMOS based industrial purpose pressure sensor. SILICON (2020). https://doi.org/10.1007/s12633-020-00785-8
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