Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor-Reference-Cited by-同舟云学术

Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor

Published:2020-10-24 Issue:12 Volume:13 Page:4633-4640
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Solay Leo Raj,Singh Sarabdeep^ORCID,Kumar Naveen,Amin S. Intekhab,Anand Sunny

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-020-00785-8.pdf

Reference26 articles.

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3. Lee NKS et al (2001) A flexible encapsulated MEMS pressure sensor system for biomechanical applications. Microsyst Technol 7(2):55–62

4. Dai C-L, Tai Y-W, Pin-Hsu K (2007) Modeling and fabrication of micro FET pressure sensor with circuits. Sensors 7(12):3386–3398

5. Hynes E et al. (2000) Development of an FET pressure sensor model and use to predict sensor behaviour as a function of electrode geometry. Proc Tech MSM

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