Junctionless multigate field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3079411
Reference6 articles.
1. Investigation of Deep Submicron Single and Double Gate SOI MOSFETs in Accumulation Mode for Enhanced Performance
2. Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs
3. Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations
4. High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs
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