Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface-Reference-Cited by-同舟云学术

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Published:2008-03-31 Issue:13 Volume:92 Page:132907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Iwamoto Kunihiko,Kamimuta Yuuichi,Ogawa Arito,Watanabe Yukimune,Migita Shinji,Mizubayashi Wataru,Morita Yukinori,Takahashi Masashi,Ota Hiroyuki,Nabatame Toshihide,Toriumi Akira

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2904650

Reference6 articles.

1. Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

2. Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

3. Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors

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