Kelvin Probe Study of Dipole Formation and Annihilation at the HfO2/Si Interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=5/a=054101/pdf
Reference16 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
3. Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf∕Al compositional ratio
4. Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
5. Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer
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1. Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO2/SiO2 interface engineering;Journal of Physics D: Applied Physics;2024-06-24
2. Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure;Applied Surface Science;2023-06
3. Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface;The Journal of Physical Chemistry C;2021-06-25
4. Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions;Applied Physics Letters;2017-04-17
5. Mechanic-electrical transformations in the Kelvin method;Applied Surface Science;2017-04
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