Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122042
Reference11 articles.
1. High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous SiO2and the Si-SiO2Interface
2. Structures chimique et electronique de l'interface SiO2-Si
3. The role of extra-atomic relaxation in determining Si 2p binding energy shifts at silicon/silicon oxide interfaces
4. Theory of Si 2pcore-level shifts at the Si(001)-SiO2interface
5. Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics
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