Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics
Author:
Affiliation:
1. Central Research Laboratory, Hitachi Ltd., 1‐280 Higashi‐Koigakubo, Kokubunji‐City, Tokyo, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference288 articles.
1. In the following, the expression “SiO2/Si“ will be used to refer to this interface and the oxide film as well unless specified otherwise.
2. Also called XPS (x-ray photoelectron spectroscopy).
3. S. Iwata and A. Ishizaka, J. Jpn. Inst. Metals 42, 1020 (1978).NIKGAV0021-4876
4. S. Iwata and A. Ishizaka, J. Jpn. Inst. Metals 43, 380 (1979).NIKGAV0021-4876
5. S. Iwata and A. Ishizaka, J. Jpn. Inst. Metals 43, 388 (1979).NIKGAV0021-4876
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