Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference31 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE.,2002
2. Very-high power density AlGaN/GaN HEMTs;Wu;IEEE Trans. Electron Devices,2001
3. 30-W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron Device Lett.,2004
4. Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide;Liu;Semicond. Sci. Technol.,2007
5. High-performance microwave gate-recessed AlGaN/AlN/GaN MOS-HEMT with 73% power-added efficiency;Hao;IEEE Electron Device Lett.,2011
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1. AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge;Journal of Applied Physics;2024-02-28
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