Impacts of density of deposited dielectric films on temperature dependence of interface dipole layer strength in multilayered dielectric capacitors for energy harvesting
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab8bbe/pdf
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1. Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
2. Understanding the impact of interface reaction on dipole strength at MgO/SiO2and Y2O3/SiO2interfaces
3. Direct evaluation of electrical dipole moment and oxygen density ratio at high-kdielectrics/SiO2interface by X-ray photoelectron spectroscopy analysis
4. Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
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1. Impacts of Al2O3/SiO2 Interface Dipole Layer Formation on the Electrical Characteristics of 4H-SiC MOSFET;IEEE Electron Device Letters;2022-01
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