Anomalous temperature dependence of Al2O3/SiO2 and Y2O3/SiO2 interface dipole layer strengths
Author:
Affiliation:
1. Department of Materials Engineering, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5079926
Reference28 articles.
1. High-K materials and metal gates for CMOS applications
2. Origin of electric dipoles formed at high-k/SiO2 interface
3. Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers
4. Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
5. Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
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1. Dipole formation to modulate flatband voltage using ALD Al2O3 and La2O3 at the interface between HfO2 and Si or Ge substrates;Applied Surface Science;2023-01
2. Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface;Journal of Vacuum Science & Technology B;2022-12
3. Dipole formation and electrical properties of high-k/SiO2 interface according to the density of SiO2 interfacial layer;Current Applied Physics;2022-05
4. Impacts of Al2O3/SiO2 Interface Dipole Layer Formation on the Electrical Characteristics of 4H-SiC MOSFET;IEEE Electron Device Letters;2022-01
5. Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces;Solid-State Electronics;2021-09
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