Dipole formation and electrical properties of high-k/SiO2 interface according to the density of SiO2 interfacial layer
Author:
Funder
Ministry of Trade, Industry and Energy
Korea Evaluation Institute of Industrial Technology
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference47 articles.
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4. Atomic layer deposition of ZrO 2/La 2 O 3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness;Abermann;Appl. Phys. Lett.,2009
5. Charge trapping analysis of metal/Al2O3/SiO2/Si, gate stack for emerging embedded memories;Khosla;IEEE Trans. Device Mater. Reliab.,2017
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