Realizing improved performance of metal-insulator-semiconductor diodes with high-k MgO/SiOx stack-Reference-Cited by-同舟云学术

Realizing improved performance of metal-insulator-semiconductor diodes with high-k MgO/SiOx stack

Published:2023-10 Issue: Volume:960 Page:170508
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Hwang Jun-Dar^ORCID,Li Cyuan-Sin,Chang Chin-Yang

Funder

Taiwan Ministry of Science and Technology

Ministry of Science and Technology of the People's Republic of China

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference46 articles.

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3. Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions;Amat;Microelectron. Reliab,2007

4. Effect of the interfacial SiO2 layer on high-k gate stacks;Chen;ECS Trans.,2013

5. Photo-induced currents in MOS structures with various HfO2/SiO2 stacking dielectrics;Pang;AIP Adv.,2014

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