Origin of electric dipoles formed at high-k/SiO2 interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3110968
Reference11 articles.
1. Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
2. Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors
3. Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
4. Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
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