Anti-Ferroelectric ZrO<sub>2</sub> Capacitors With Ultralow Operating Voltage (<1.2 V) and Improved Endurance Toward Logic Compatible eDRAM-Reference-Cited by-同舟云学术

Anti-Ferroelectric ZrO₂ Capacitors With Ultralow Operating Voltage (<1.2 V) and Improved Endurance Toward Logic Compatible eDRAM

Published:2024-09 Issue:9 Volume:71 Page:5767-5770
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xu Jiacheng¹^ORCID,Ma Minglei¹^ORCID,Shen Rongzong¹,Qian Haoji¹^ORCID,Lin Gaobo²,Gu Jiani²^ORCID,Song Xinda²,Liu Huan¹,Liu Yan¹^ORCID,Chen Jiajia¹^ORCID,Jin Chengji¹^ORCID,Han Genquan¹^ORCID

Affiliation:

1. Hangzhou Institute of Technology, School of Microelectronics, Xidian University, Xi’an, China

2. Zhejiang Laboratory, Hangzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10609349.pdf?arnumber=10609349

Reference20 articles.

1. Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)

2. Strategy toward HZO BEOL-FeRAM with low-voltage operation (= 1.2 V), low process temperature, and high endurance by thickness scaling;Tahara

3. First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip

4. A 256 kbit Hf0.5Zr0.5O2-based FeRAM chip with scaled film thickness (sub-8nm), low thermal budget (350°C), 100% initial chip yield, low power consumption (0.7 pJ/bit at 2 V write voltage), and prominent endurance (>1012);Jiang;IEDM Tech. Dig.,2023

5. A highly reliable 1.8 V 1 mb Hf0.5Zr0.5O2-based 1T1C FeRAM array with 3-D capacitors;Okuno;IEDM Tech. Dig.,2023