Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)-Reference-Cited by-同舟云学术

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Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)

Published:2020-06 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Symposium on VLSI Technology
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Author:

Grenouillet L.,Francois T.,Coignus J.,Kerdiles S.,Vaxelaire N.,Carabasse C.,Mehmood F.,Chevalliez S.,Pellissier C.,Triozon F.,Mazen F.,Rodriguez G.,Magis T.,Havel V.,Slesazeck S.,Gaillard F.,Schroeder U.,Mikolajick T.,Nowak E.

Funder

European Union's Horizon 2020 research and innovation program

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9264988/9264985/09265061.pdf?arnumber=9265061

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2. Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing;Applied Materials Today;2024-02

3. Advancements in Back End of Line Technology: Enhancing Semiconductor Manufacturing Efficiency;Handbook of Emerging Materials for Semiconductor Industry;2024

4. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024

5. Analog Hf_xZr_1‐xO₂ Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network;Advanced Electronic Materials;2023-12-27

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