Effect of Composition in Ternary La–Al–O Films on Flat-Band Voltage for Application to Dual High-kGate Dielectric Technology
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference4 articles.
1. LaAlO3 gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate
2. The work function of the elements and its periodicity
3. The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics
4. Band gap engineering for La aluminate dielectrics on Si (100)
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1. Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions;Applied Physics Letters;2017-04-17
2. Understanding the impact of interface reaction on dipole strength at MgO/SiO2and Y2O3/SiO2interfaces;Japanese Journal of Applied Physics;2016-03-24
3. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?;Materials;2012-03-14
4. Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices;Materials;2012-03-14
5. Detailed investigation of the effects of La and Al content on the electrical characteristics and reliability properties of La–Al–O gate dielectrics;Microelectronics Reliability;2010-12
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