The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics-Reference-Cited by-同舟云学术

The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics

Published:2008-07 Issue:7 Volume:29 Page:743-745
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cho Hag-Ju,Yu Hong Yu,Chang Vincent S.,Akheyar Amal,Jakschik Stefan,Conard Thierry,Hantschel Thomas,Delabie Annelies,Adelmann Christoph,Van Elshocht Sven,Ragnarsson Lars-Åke,Schram Tom,Absil Philippe,Biesemans Serge

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4558060/04558118.pdf?arnumber=4558118

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