Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/5/3/478/pdf
Reference75 articles.
1. Design of ion-implanted MOSFET's with very small physical dimensions
2. Scaling the gate dielectric: Materials, integration, and reliability
3. High-κ gate dielectrics: Current status and materials properties considerations
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