Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)-Reference-Cited by-同舟云学术

Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)

Published:2024-07 Issue:7 Volume:45 Page:1193-1196
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhong Kun¹^ORCID,Zhang Fan¹^ORCID,Zhang Zhaohao²^ORCID,Zhang Qingzhu¹^ORCID,Hou Zhaozhao³,Zhao Chunsong²,Han Genquan³^ORCID,Xu Gaobo¹^ORCID,Li Junfeng¹,Liu Yan³^ORCID,Xu Jeffrey²,Yin Huaxiang¹^ORCID

Affiliation:

1. Integrated Circuit Advanced Process R&D Center and Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. Huawei Technologies Company Ltd., Shenzhen, China

3. School of Microelectronics, Xidian University, Xi’an, China

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association, Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10533213.pdf?arnumber=10533213

Reference23 articles.

1. The future transistors

2. Equivalent Oxide Thickness (EOT) Scaling With Hafnium Zirconium Oxide High-κ Dielectric Near Morphotropic Phase Boundary

3. Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process

4. Higher-k zirconium doped hafnium oxide (HZO) trigate transistors with higher DC and RF performance and improved reliability;Chakraborty

5. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?