Reduction of dislocations in GaN epilayers using templated three-dimensional coherent nanoislands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1926419
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2. Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching
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4. Initial stage of GaN nucleation on 30°-Ga reconstructed 4H-SiC()Si by molecular-beam epitaxy
5. Dynamically stable gallium-induced 3×3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy
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1. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers;Journal of Crystal Growth;2018-02
2. Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers;Journal of Applied Physics;2009-03-15
3. High quality AlN grown on SiC by metal organic chemical vapor deposition;Applied Physics Letters;2008-11-10
4. Fully unstrained GaN on sacrificial AlN layers by nano-heteroepitaxy;physica status solidi (c);2007-06
5. Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates;physica status solidi (c);2006-06
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