Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers
2. Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiC
3. Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates
4. Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas‐source molecular beam epitaxy
5. STM study of the SiC(0001) √3 × √3 surface
Cited by 137 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Self-powered epitaxial graphene/SiC-C heterojunction UV photodetector;Sensors and Actuators A: Physical;2024-10
2. Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth;Materials;2022-10-31
3. Origins of Ultrafast Pulse Laser-Induced Nano Straight Lines with Potential Applications in Detecting Subsurface Defects in Silicon Carbide Wafers;Nanomanufacturing and Metrology;2022-04-13
4. Assessing the effect of H on the electronic properties of 4H-SiC;Chinese Physics B;2021-12-11
5. Nondeteriorating Verwey Transition in 50 nm Thick Fe3O4 Films by Virtue of Atomically Flattened MgO Substrates: Implications for Magnetoresistive Devices;ACS Applied Nano Materials;2021-11-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3