Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers-Reference-Cited by-同舟云学术

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Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

Published:1991-07-15 Issue:3 Volume:59 Page:333-335
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Powell J. A.,Petit J. B.,Edgar J. H.,Jenkins I. G.,Matus L. G.,Yang J. W.,Pirouz P.,Choyke W. J.,Clemen L.,Yoganathan M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.105587

Reference8 articles.

1. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates

2. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers

3. Epitaxial Growth of Silicon Carbide by the Thermal Reduction Technique

4. Epitaxial growth of β‐SiC thin films on 6Hα‐SiC substrates via chemical vapor deposition

5. Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates

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