Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341608
Reference14 articles.
1. Saturated electron drift velocity in 6H silicon carbide
2. Breakdown field in vapor‐grown silicon carbidep‐njunctions
3. Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
4. Hot electron microwave conductivity of wide bandgap semiconductors
5. Transmission electron microscopy of process-induced defects in β-SiC thin films
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4. Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock;Japanese Journal of Applied Physics;2022-10-31
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