Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102492
Reference15 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
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4. Lattice Defects in β-Sic Grown Epitaxially On Silicon Substrates
5. Investigation of growth processes of ingots of silicon carbide single crystals
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