Lattice Defects in β-Sic Grown Epitaxially On Silicon Substrates

Author:

Pirouz P.,Chorey C. M.,Cheng& T. T.,Powell J. A.

Abstract

ABSTRACTDefects generated in β-SiC grown on a (001) silicon substrate by chemical vapor deposition (CVD) are charaterized and their mechanism of formation discussed. It is argued that nucleation plays a primary role in this heteroepitaxial system where the lattice mismatch is so large.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference15 articles.

1. The formation of imperfections in epitaxial gold films

2. [8] Powell J. A. , Matus L. G. & Kuczmarski M. A. , Chorey C. M. , Cheng T. T. & Pirouz P. , Submitted to Appl. Phys. Lett. (1987).

3. [7] Powell J. A. , Matus L. G. & Kuczmarski M. A. , J. Electrochem. Soc. (1987), In press.

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