Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations-Reference-Cited by-同舟云学术

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Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Published:2021-03-20 Issue:6 Volume:258 Page:2000598
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Barbisan Luca¹^ORCID,Sarikov Andrey¹²^ORCID,Marzegalli Anna¹³^ORCID,Montalenti Francesco¹^ORCID,Miglio Leo¹^ORCID

Affiliation:

1. L-NESS Department of Materials Science Università degli Studi di Milano-Bicocca via R. Cozzi 55 I-20125 Milano Italy

2. V. Lashkarev Institute of Semiconductor Physics National Academy of Sciences of Ukraine 45 Nauki avenue 03028 Kyiv Ukraine

3. Department of Physics Politecnico di Milano via Anzani 42 I-22100 Como Italy

Funder

H2020 LEIT Advanced Materials

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000598

Reference38 articles.

1. Cramming more components onto integrated circuits, Reprinted from Electronics, volume 38, number 8, April 19, 1965, pp.114 ff.

2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

3. Lattice Defects in β-Sic Grown Epitaxially On Silicon Substrates

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of drilling speed on the evolution mechanism of subsurface defects in single crystal 3C-SiC in molecular dynamics;Journal of Materials Science;2024-07

2. Advanced approach of bulk (111) 3C-SiC epitaxial growth;Microelectronic Engineering;2024-01

3. Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation;Nanomaterials;2023-07-28

4. Molecular dynamics analysis of friction damage on nano-twin 6 H-SiC surface;Tribology International;2023-02

5. Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC;Crystal Growth & Design;2022-06-29

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