The influence of drilling speed on the evolution mechanism of subsurface defects in single crystal 3C-SiC in molecular dynamics
Author:
Funder
National Natural Science Foundation of China
the Key Project of Natural Science Foundation of Jiangxi Province
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10853-024-09947-0.pdf
Reference24 articles.
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2. Cheng Z, Liang J, Kawamura K et al (2022) High thermal conductivity in wafer-scale cubic silicon carbide crystals. Nat Commun 13(1):7201. https://doi.org/10.1038/s41467-022-34943-w
3. Tsai A, Aghajamali A, Dontschuk N et al (2020) Epitaxial formation of SiC on (100) diamond. ACS Appl Electron Mater 2(7):2003–2009
4. Plaisantin H, Danet J, Berdoyes I et al (2023) Structure, microstructure and disorder in low temperature chemical vapor deposited SiC coatings. J Eur Ceram Soc 43(9):3917–3930
5. Chen PC, Miao WC, Ahmed T et al (2022) Defect inspection techniques in SiC. Nanoscale Res Lett 17(1):30. https://doi.org/10.1186/s11671-022-03672
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